Irradiation of DEFET transistors with CO60 souce at Santiago

Procedure

2 chips with 30 bonded transistors will be irradiated in several steps. Biasing voltages and Adaptor Boards pin assingment can be seen in

• BoardsLayout.xlsx: Multi Transistor biasing voltages; Adaptor Board pin assingment; Dose Setup information

Ids_Vgs curves will be done before irradiation and after each step. What we are interesting in is: Threshold Voltage, transconductance, substhreshold swing

Measuring steps from 0 to 10 Mrad (in Mrad) dose ~ 11.5 Krad/h):

• 0.1 (9 h) I1: 24.6:14h -> 24h ; T1: 25.6:9h ->12h
• 0.2 (9 h) I2: 25.6:12h -> 21h : T2: 28.6:9h -> 12h
• 0.3 (9 h) I3: 28.6:12h
• 0.5 (18 h)
• 0.8 (27 h)
• 1.2 (27 h)
• 1.7 (45 h)
• 2.3 (54 h)
• 3.0 (63 h)
• 5.0 (180 h)
• 7.5 (225 h)
• 10 (225 h)

IV curves

• chip0_25t_43r_.25s.xlsx: Chip 0

• chip1_25t_44r_.25s.xlsx: Chip 1

• chip2_25t_44r_250ms.xlsx: Chip 2

Broken Transistor before irradiation: chip0=10, chip1=15, chip2=8

• Chip_0_1_2_bad.pdf: Broken transistors

Adaptor Boards photos

• Testing Board:
  

• Chips_Holder Board:
  

• Irradiation Board:
  

to top