Irradiation of DEFET transistors with CO60 souce at Santiago
Procedure
2 chips with 30 bonded transistors will be irradiated in several steps. Biasing voltages and Adaptor Boards pin assingment can be seen in
- BoardsLayout.xlsx: Multi Transistor biasing voltages; Adaptor Board pin assingment; Dose Setup information
Ids_Vgs curves will be done before irradiation and after each step. What we are interesting in is: Threshold Voltage, transconductance, substhreshold swing
Measuring steps from 0 to 10 Mrad (in Mrad) dose ~ 11.5 Krad/h):
- 0.1 (9 h) I1: 24.6:14h -> 24h ; T1: 25.6:9h ->12h
- 0.2 (9 h) I2: 25.6:12h -> 21h : T2: 28.6:9h -> 12h
- 0.3 (9 h) I3: 28.6:12h
- 0.5 (18 h)
- 0.8 (27 h)
- 1.2 (27 h)
- 1.7 (45 h)
- 2.3 (54 h)
- 3.0 (63 h)
- 5.0 (180 h)
- 7.5 (225 h)
- 10 (225 h)
IV curves
Broken Transistor before irradiation: chip0=10, chip1=15, chip2=8
Adaptor Boards photos
to top